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HM4260 Datasheet, H&M Semiconductor

HM4260 mosfet equivalent, n-channel enhancement mode power mosfet.

HM4260 Avg. rating / M : 1.0 rating-17

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HM4260 Datasheet

Features and benefits


* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche .

Application

General Features
* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram
* High density.

Description

The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic dia.

Image gallery

HM4260 Page 1 HM4260 Page 2 HM4260 Page 3

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